[18p-E1-1~14] Developments and Challenges for Resistance Change Memories Technology (抵抗変化メモリ技術の発展及び課題）

▲ [18p-E1-5] Atomic switch: Resistance change memory based on cation transport and redox reactions in oxide thin layers (30分)

^○鶴岡徹^1,2，長谷川剛^1,2，寺部一弥¹，青野正和¹ (物材機構¹，JST-CREST²)

キーワード：原子スイッチ,金属酸化物,高分子電解質