[18p-PA12-1~10] 13.4 Devices/Integration Technologies

[18p-PA12-2] Mechanisms of hole mobility enhancement in (100) pMOSFET on Si substrates

^○Yuji Asakura^1,2, Koji Araki³, Moriya Miyashita³, Koji Izunome³, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (The University of Tokyo¹, JST CREST², GlobalWafers Japan³)

Keywords:SiMOSFET,移動度,半導体