[19p-D8-1~13] 14.3 Electron devices and Process technology

[19p-D8-6] A temperature dependent model for GaN schottky barrier diode

^○Toshiyuki Oishi¹, Yutaro Yamaguchi¹, Hiroshi Otsuka¹, Koji Yamanaka¹, Yoichi Nogami¹, Hiroshi Fukumoto¹, Yasuyuki Miyamoto² (Mitsubisi Electric¹, Tokyo Institute of Technology²)

Keywords:GaN,ショットキーバリアダイオード