Characterization of defect levels in undoped n-BaSi<sub>2</sub> epitaxial films on Si(111) by deep level transient spectroscopy

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

Thu. Mar 20, 2014 9:00 AM - 12:00 PM D3 (D114)

11:00 AM - 11:15 AM

^○Hiroki Takeuchi¹, Weijie Du¹, Masakazu Baba¹, Ryouta Takabe¹, Kaoru Tokoh¹, Takashi Suemasu^1,2 (Univ.Tsukuba¹, JST-CREST²)

Keywords:BaSi2,DLTS