Poster presentation

[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Sep 14, 2015 4:00 PM - 6:00 PM PB6 (Shirotori Hall)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[14p-PB6-1] Solution growth of 4H-SiC bulk crystals with very low dislocation density

〇Katsunori Danno¹, Satoshi Yamaguchi², Hiroyuki Kimoto¹, Kazuaki Sato¹, Takeshi Bessho¹ (1.Toyota Motor Corp., 2.Toyota Central R & D Lab.)

4:00 PM - 6:00 PM

[14p-PB6-2] Spatial distribution of carrier concentration in n-type 4H-SiC grown by solution method

〇Zhenjiang Wang¹, Takahiko Kawaguchi¹, Kenta Murayama¹, Kenta Aoyagi¹, Shunta Harada¹, Takenobu Sakai¹, Toru Ujihara¹ (1.Nagoya Univ.)

4:00 PM - 6:00 PM

[14p-PB6-3] Relationship between the convection in Si-based melt and growth thickness in solution growth of SiC from the crucible bottom

〇(M1)Hodaka Kutsukake¹, Kento Hine¹, Toshinori Taishi^1,2 (1.Shinshu Univ., 2.SEES Shinshu Univ.)

4:00 PM - 6:00 PM

[14p-PB6-4] Impact Ionization Rate of 4H-SiC in the GW Approximation

〇(M1)Kosuke Konaga¹, Takao Kotani², Yoshinari Kamakura¹, Nobuya Mori¹ (1.Osaka Univ., 2.Tottori Univ.)

4:00 PM - 6:00 PM

[14p-PB6-5] HAXPES and XRD characterization of Ni-silicide/SiC interface formed by thermal annealing

〇Satoshi Yasuno¹, Tomoyuki Koganezawa¹ (1.JASRI)

4:00 PM - 6:00 PM

[14p-PB6-6] Observation of the laser ablation of SiC substrate

〇Junsuke Okamoto¹, Reina Miyagawa¹, Yu Okabe¹, Osamu Eryu¹ (1.Nagoya Inst.of Tech.)

4:00 PM - 6:00 PM

[14p-PB6-7] Investigation on Al₂O₃,Al₆Si₂O₁₃ gate insulator for
4H-SiC MISFETs in harsh environment

〇Hikaru Akase¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Milantha de Silva¹, Hirofumi Nagatuma¹, Takamaro Kikkawa¹, Shin-ichiro Kuroki¹ (1.Hiroshima Uni.RNBS, 2.Phenitec)

4:00 PM - 6:00 PM

[14p-PB6-8] Electrical Characteristics and oxidant concentration near SiO₂/4H-SiC(000-1) Interface

〇Kohei Hanasato¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Tsukuba university)

4:00 PM - 6:00 PM

[14p-PB6-9] A Unified Theory of SiC Thermal Oxidation Mechanism based on the Si and C Emission Model

〇Yasuto Hijikata¹, Ryosuke Asafuji¹ (1.Saitama Univ.)

4:00 PM - 6:00 PM

[14p-PB6-10] $\gamma$-ray irradiation for SiC MOSFETs from ROHM Co., Ltd.

〇Takahiro MAKINO¹, Shinobu ONODA¹, Mineo MIURA², Takeshi OHSHIMA¹ (1.JAEA, 2.ROHM Co., Ltd.)

4:00 PM - 6:00 PM

[14p-PB6-11] Effects of Gamma-ray Irradiation in Bias Condition on SiC MOSFETs Fabricated using Different Gate Oxidation Processes

〇(M1)KOICHI MURATA^1,2, Satoshi Mitomo^1,2, Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd)

Oral presentation

[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:原田俊太(名大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[15a-1A-1] Improvement of Crystallinity of SiC Thin Films on AlN/Si(110) Substrates

〇(M1)Shunki Narita¹, Kazuki Meguro¹, Hideki Nakazawa¹ (1.Hirosaki Univ.)

9:15 AM - 9:30 AM

[15a-1A-2] Mechanism of Crystallographically Rotated Growth of 3C-SiC(111) Thin Film on Si(110)

〇tai yokoyama¹, Sergey Filimonov², Hiroyuki Nagasawa¹, Hirokazu Fukidome¹, Maki Suemitsu¹ (1.Tohoku Univ. RIEC, 2.Tomsk State Univ.)

9:30 AM - 9:45 AM

△ [15a-1A-3] Rate of advance of steps analysis by in situ observation of SiC solution growth interface with high-vacuum laser microscope

〇Aomi Onuma¹, Shingo Maruyama¹, Takeshi Mitani², Tomohisa Kato², Hajime Okumura², Yuji Matsumoto^1,3 (1.Tohokou Univ., 2.AIST, 3.JST-ALCA)

9:45 AM - 10:00 AM

△ [15a-1A-4] Formation mechanism of 1-unit-cell-height steps on macro terraces of macro-step-bunched SiC surface by high-temperature hydrogen gas etching

〇Kazuto Hirai¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (1.Kyoto Univ.)

10:00 AM - 10:15 AM

[15a-1A-5] Amorphous SiC Film Deposition at Room Temperature under Soft Plasma

Kohei Shioda¹, Maria Tanaka¹, Asumi Hirooka¹, 〇Hitoshi Habuka¹ (1.Yokohama Nat. Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

[15a-1A-6] Repetition of SiC Epitaxial Reactor Cleaning Using Chlorine Trifluoride Gas

〇kohei shioda¹, Kosuke Mizuno¹, Hitomi Matsuda¹, Hitoshi Habuka¹, Yuuki Ishida², Toshiyuki Ohno³ (1.Yokohama Nat.Univ, 2.AIST, 3.FUPET)

10:45 AM - 11:00 AM

[15a-1A-7] SiC wafer etching rate behavior using ClF₃ gas

〇Ken Nakagomi¹, Dairi Yajima¹, Hitoshi Habuka¹, Tomohisa Kato² (1.Yokohama.Nat.Univ., 2.AIST.)

11:00 AM - 11:15 AM

[15a-1A-8] Etching rate and surface morphology of C-face 4H-SiC epitaxial film using chlorine trifluoride gas

〇Asumi Hirooka¹, Yusuke Fukumoto¹, Hitoshi Habuka¹, Tomohisa Kato² (1.Yokohama Nat. Univ., 2.AIST)

11:15 AM - 11:30 AM

[15a-1A-9] Removal of damaged layer on 4H-SiC surface and its effects using Si-vapor etching

〇Satoshi Torimi¹, Norihito Yabuki¹, Masato Shinohara¹, Youji Teramoto¹, Satoru Nogami¹, Tadaaki Kaneko² (1.Toyo Tanso Corp., 2.Kwansei Gakuin Univ.)

11:30 AM - 11:45 AM

△ [15a-1A-10] Control of Carrier Lifetimes in Thick n-type SiC Epilayers by High-Temperature Annealing

〇Eiji Saito¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

11:45 AM - 12:00 PM

△ [15a-1A-11] Photoluminescence Study of Oxidation-induced Faults in 4H-SiC Epilayers

〇(M1)Ryosuke Asafuji¹, Shuhei Yagi¹, Yasuto Hijikata¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

Oral presentation

[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 15, 2015 1:30 PM - 5:30 PM 1A (131+132)

座長:黒木伸一郎(広島大),升本恵子(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 1:45 PM

[15p-1A-1] [Young Scientist Presentation Award Speech] Impact Ionization Coefficients in SiC Toward Ultrahigh-Voltage Power Devices

〇Hiroki Niwa¹, Jun Suda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

1:45 PM - 2:00 PM

[15p-1A-2] 3D-integration of Si-based Peltier device onto 4H-SiC power device

〇Yutaka Furubayashi¹, Takafumi Tanehira², Kei Yonemori², Norihide Seo², Shin-Ichiro Kuroki¹ (1.RNBS, Hiroshima Univ, 2.Mazda Motor Corp.)

2:00 PM - 2:15 PM

[15p-1A-3] SiC semiconductor phase-leg power module with low parasitic inductance

〇Tatsuhiro Suzuki¹, Mari Yamashita¹, Tetsuya Mori¹, Takaya Fujita¹, Satoshi Tanimoto¹ (1.NISSAN ARC)

2:15 PM - 2:30 PM

[15p-1A-4] Electrical Characteristics of SiC Schottky Diode with Laminated Mo/C Electrode

〇(M1)Tomoyuki Suzuki¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech. IGSSE)

2:30 PM - 2:45 PM

[15p-1A-5] Low resistance SiC/Carbon Interstitial type Metal/Ni ohmic contact formation by Laser annealing

〇Desilva Milantha¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec Semi.Corp.)

2:45 PM - 3:00 PM

△ [15p-1A-6] Improvement in Contact Resistance of 4H-SiC by Excimer Laser Doping

〇Ryota Kojima¹, Hiroshi Ikenoue¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Tatsuo Okada¹ (1.Kyushu Univ.)

3:00 PM - 3:15 PM

[15p-1A-7] High Efficiency Activation of Hot-implanted Phosphorus atoms into 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Irradiation

〇Hiroaki Hanafusa¹, Ryosuke Ishimaru¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

Break （3:15 PM - 3:30 PM）

3:30 PM - 4:00 PM

[15p-1A-8] [JSAP Paper Award Speech] Three-dimensional imaging and tilt-angle analysis of dislocations in 4H-SiC by two-photon-excited band-edge photoluminescence

〇Ryohei Tanuma¹, Masahiro Nagano¹, Isaho Kamata¹, Hidekazu Tsuchida¹ (1.CRIEPI)

4:00 PM - 4:15 PM

[15p-1A-9] Noncontact and nondestructive measurement of electrical properties for SiC film using THz ellipsometry

〇Takashi Fujii^1,2, Iwamoto Toshiyuki¹, Sato Yukinori¹, Tachi Kohei², Araki Tsutomu², Nanishi Yasushi², Sugie Ryuichi³, Morita Noayoshi³, Nagashima Takeshi⁴ (1.PNP, 2.Ritsumeikan Univ., 3.TRC, 4.Setsunan Univ.)

4:15 PM - 4:30 PM

[15p-1A-10] Observation of basal plane dislocation in 4H-SiC wafer by mirror projection electron microscopy and low-energy SEM

〇Toshiyuki Isshiki¹, Yoshihisa Orai², Takahiro Sato² (1.Kyoto Inst. Tech., 2.Hitachi High-Tech.)

4:30 PM - 4:45 PM

[15p-1A-11] Stacking Fault Expansion in 4H-SiC by Electron-beam Erradiation and Contraction by Thermal Annealing

〇Yoshifumi Yamashita¹, Ryu Nakata¹, Takuya Shimomura¹, Takeshi Nishikawa¹, Yasuhiko Hayashi¹ (1.Okayama Univ.)

4:45 PM - 5:00 PM

[15p-1A-12] Hole capture cross section of Al level in 4H-SiC

〇(M2)DI JING¹, MASASHI KATO¹, MASAYA ICHIMURA¹, KAZUTOSHI KOJIMA² (1.Nagoya Inst. Tech., 2.AIST)

5:00 PM - 5:15 PM

△ [15p-1A-13] Performance improvement of 3C-SiC photoelectrodes by supporting catalysts

〇naoto ichikawa¹, Masashi Kato¹, Masaya Ichimura¹ (1.NIT)

5:15 PM - 5:30 PM

[15p-1A-14] Methane production by CO₂reduction with 3C-SiC photo-electrode

〇shunnosuke Akabane¹, Go Sahara¹, Naosumi Ichikawa², Masashi Kato², Kazuhiko Maeda¹, Takayuki Iwasaki¹, Tetsuo Kodera¹, Mutsuko Hatano¹ (1.Tokyo Inst. of Tech, 2.Nagoya Inst. of Tech)

Oral presentation

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 16, 2015 9:00 AM - 12:00 PM 1A (131+132)

座長:土方泰斗(埼玉大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[16a-1A-1] Evaluation of Electronic States of Thermally-grown SiO₂/4H-SiC

〇Hiromasa Watanabe¹, Ohta Akio¹, Makihara Katsunori¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

9:15 AM - 9:30 AM

[16a-1A-2] C-related Defect reduced by the Control of Dry Oxidation Process

Tomoya Sasago¹, Hitoshi Arai¹, Koji Kita², Takayuki Muro³, 〇Hiroshi Nohira¹ (1.Tokyo City Univ., 2.The Univ. of Tokyo, 3.Japan Synchrotron Radiation Research Institute)

9:30 AM - 9:45 AM

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on
4H-SiC (0001)

〇Hitoshi Arai¹, Hiroshi Nohira¹ (1.Tokyo City Univ.)

9:45 AM - 10:00 AM

△ [16a-1A-4] A study on evaluation technique of SiO₂/SiC interface using super-higher-order nonlinear dielectric microscopy

〇Norimichi Chinone¹, Ryoji Kosugi², Yasunori Tanaka³, Shinsuke Harada², Hajime Okumura², Yasuo Cho¹ (1.Tohoku Univ., 2.AIST, 3.Government of Japan)

10:00 AM - 10:15 AM

[16a-1A-5] Oxidation of 4H-SiC by Atmospheric Pressure Thermal-Plasma-Jet

〇Ryosuke Ishimaru¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ.)

10:15 AM - 10:30 AM

[16a-1A-6] Understanding of Relaxation Phenomena Due to Near-Interface Oxide Traps in SiC MOS Capacitors Using Transient Capacitance Measurements

〇Yuki Fujino¹, Koji Kita¹ (1.The Univ. of Tokyo)

Break （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

△ [16a-1A-7] Ultra-high-temperature oxidation of 4H-SiC(0001) surfaces for MOS gate oxides

〇Daisuke Nagai¹, Sometani Mitsuru², Hosoi Takuji¹, Shimura Takayoshi¹, Watanabe Heiji¹ (1.Osaka Univ., 2.Fuji Electric Co., Ltd.)

11:00 AM - 11:15 AM

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO₂/4H-SiC by post-oxidation annealing in pure nitrogen gas

〇(P)Atthawut Chanthaphan¹, Yen Hung Cheng¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:15 AM - 11:30 AM

△ [16a-1A-9] Hole Trap Generation due to Interface Nitridation in SiC MOS Devices

〇YOSHIHITO KATSU¹, Atthawut Chanthaphan¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

11:30 AM - 11:45 AM

[16a-1A-10] The Gamma-ray Irradiation Effect on SiC-MOSFETs with Various Device Structure

〇satoshi mitomo^1,2, Takuma Matsuda^1,2, Koichi Murata^1,2, Takashi Yokozeki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Takeshi Ohshima², Syuichi Okubo³, Yuki Tanaka³, Mikirou Kandori³, Toru Yosie³, Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co.)

11:45 AM - 12:00 PM

[16a-1A-11] Electrical Properties of SiC MOSFETs Irradiated with Gamma-rays at Elevated Temperature

〇Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama University, 2.JAEA, 3.Sanken Electric Co.)

Sessions

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[14p-PB6-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[15a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [15a-1A-3] Rate of advance of steps analysis by in situ observation of SiC solution growth interface with high-vacuum laser microscope

△ [15a-1A-4] Formation mechanism of 1-unit-cell-height steps on macro terraces of macro-step-bunched SiC surface by high-temperature hydrogen gas etching

△ [15a-1A-10] Control of Carrier Lifetimes in Thick n-type SiC Epilayers by High-Temperature Annealing

△ [15a-1A-11] Photoluminescence Study of Oxidation-induced Faults in 4H-SiC Epilayers

[15p-1A-1~14] 15.6 Group IV Compound Semiconductors (SiC)

△ [15p-1A-6] Improvement in Contact Resistance of 4H-SiC by Excimer Laser Doping

△ [15p-1A-13] Performance improvement of 3C-SiC photoelectrodes by supporting catalysts

[16a-1A-1~11] 15.6 Group IV Compound Semiconductors (SiC)

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on4H-SiC (0001)

△ [16a-1A-4] A study on evaluation technique of SiO2/SiC interface using super-higher-order nonlinear dielectric microscopy

△ [16a-1A-7] Ultra-high-temperature oxidation of 4H-SiC(0001) surfaces for MOS gate oxides

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO2/4H-SiC by post-oxidation annealing in pure nitrogen gas

△ [16a-1A-9] Hole Trap Generation due to Interface Nitridation in SiC MOS Devices

Authentication

△ [16a-1A-3] Angle-resolved Photoelectron Spectroscopy studies of initial stage of thermal oxidation on
4H-SiC (0001)

△ [16a-1A-4] A study on evaluation technique of SiO₂/SiC interface using super-higher-order nonlinear dielectric microscopy

▼ [16a-1A-8] Interface nitridation of thermally-grown SiO₂/4H-SiC by post-oxidation annealing in pure nitrogen gas