[14p-1B-1~9] Evaluation technology for oxide semiconductor

[14p-1B-6] Atomic-resolution electronic-structure studies of metal oxides

〇Taro Hitosugi¹ (1.Tohoku Univ., AIMR)

Keywords:oxides,scanning tunneling microscope,STM

Transition-metal oxides show a variety of phenomena at their surfaces and interfaces, which have been induced by structural and electronic modifications. Although intensive studies of oxides have provided a fertile new ground for creating novel states at their surfaces and interfaces, the origins of the functionalities, on an atomic scale spatial resolution, remain far from understood. In order to clarify the origins of such phenomena and to further explore intriguing functionalities, it is important to elucidate their electronic structures at the atomic level.
In this presentation, the scanning tunneling microscopy (STM) studies of Si donors in β - Ga₂O₃ are reported. Atomic-scale electronic structures show different properties depending on the numbers of coordinated oxygen atoms around Si donors. Further, spatial electron distribution on LiCoO₂ surface, depending on the atomic arrangement of Li ions, is discussed.