[14p-2T-15~20] 17.2 Structure control and process

[14p-2T-19] Fabrication and characterization of graphene lateral superlattices on SiC facets (2)

〇(M2)Kouhei Fukuma¹, Shingo Hayashi¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Satoru Tanaka¹, Takushi Iimori², Kouichirou Ienaga², Kouichirou Yaji², Hiroshi Nakatsuji², Fumio Komori², hirokazu Tanaka³, masanobu Kanda³, Nguyen Thanh Cuong⁴, Susumu Okada³ (1.Kyushu univ., 2.Univ. Tokyo, 3.Univ. Tsukuba, 4.NIMS)

Keywords:graphene,grafene lateral superlattice,focused ion beam

Semi-insulating 4H-SiC surface with 4°-off toward [11-20] is transformed into 4°-off toward [1-100] surface, which is essential to grow graphene lateral superlattices (GLSLs), by focused ion beam (FIB) technique. The carrier transport properties of GLSLs are examined by means of 2-terminal and 4-terminal I-V measurements, indicating, respectively, semiconducting and ballistic transport characteristics.