[14p-CE-5~11] New functional GaN-based laser diodes and the applications

[14p-CE-10] Design and lasing characteristics of nitride vertical elongated cavity surface emitting laser

〇Masao Kawaguchi¹, Osamu Imafuji¹, Kentaro Nagamatsu², Kazuhiko Yamanaka², Shinichi Takigawa¹, Takuma Katayama¹ (1.Panasonic Corp., 2.Panasonic Semiconductor Solutions Co., Ltd.)

Keywords:gallium nitride,vertical cavity surface emitting laser,array

A GaN-based vertical-cavity surface-emitting laser (VCSEL) array has been attracting much attention as a potential light source for various applications. For such an array structure, uniform operation of the elements is one of the most important technical challenges. In a typical VCSEL with several-wavelength cavity, the gain peak easily goes out of the cavity mode due to the heat-induced peakshift of the gain spectrum. On the other hand, elongation of the cavity length allows several optical modes within the spectrum. In this context, the elongated cavity is robust against the thermally-induced peakshift of the gain, because other cavity modes can match the shifted gain peak. Here, we report on design and lasing characteristics of GaN-VCSELs with the elongated cavity.