[16a-1C-1~11] 13.5 デバイス／集積化技術

△ [16a-1C-5] InGaAs-OI TFET on Si Fabricated by Direct Wafer Bonding Technology

〇(M2)安 大煥^1,2、TAKENAKA MITSURU^1,2、TAKAGI SHINICHI^1,2 (1.The Univ. of Tokyo、2.JST CREST)

キーワード：Tunnel FET、InGaAs、On Insulator structure

In this paper, we have succeeded to fabricate In_0.53Ga_0.47As-OI(On Insulator) TFET(Tunnel Field Effect Transistor), for the first time. In_0.53Ga_0.47As -OI wafer were fabricated by Direct Wafer Bonding. However, We couldn’t achieve the steeper Subthreshold Swing & higher On-Off rate than Bulk InGaAs TFET because of mirco void .With forming Source region by Zn diffusion on InGaAs-OI, 91mV/dec and ~10⁴On off rate were obtained. For improving the InGaAs-OI TFET, We still need to study more to optimize Zn diffusion Condition On InGaAs-OI .