[14p-D11-1~7] 10.3 GMR・TMR・磁気記録技術

2015年3月14日(土) 13:00 〜 15:00 D11 (16-306)

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13:00 〜 13:30

[14p-D11-1] [第5回女性研究者研究業績・人材育成賞(小舘香椎子賞)受賞記念講演] 垂直通電型巨大磁気抵抗効果増大の開発～スピントロニクス産業へ向けて～

〇湯浅裕美¹ (1.東芝)

13:30 〜 13:45

▲ [14p-D11-2] Bias voltage dependence in magnetic tunnel junctions with a spinel Mg-Al-O barrier

〇Hiroaki Sukegawa¹, Koichiro Inomata¹, Seiji Mitani¹ (1.NIMS)

13:45 〜 14:00

▲ [14p-D11-3] Enhancement of CPP-GMR by a CuZn alloy spacer layer

〇Takao Furubayashi¹, Yukiko Takahashi¹, Taisuke Sasaki¹, Kazuhiro Hono¹ (1.NIMS)

14:00 〜 14:15

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co₂(Fe-Mn)Si/Ag-Mg/Co₂(Fe-Mn)Si junctions

Hiroyuki Narisawa¹, 〇Takahide Kubota¹, Koki Takanashi¹ (1.IMR, Tohoku Univ.)

14:15 〜 14:30

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co₂Fe(Ga_0.5Ge_0.5) Heusler alloy layer and conductive Mg_0.5Ti_0.5O_xbuffer layer

〇(D)YE DU^1,², Takao Furubayashi², Yukiko Takahashi², Yuya Sakuraba², Kazuhiro Hono^1,² (1.Univ. of Tsukuba, 2.NIMS)

14:30 〜 14:45

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co₂MnSi and Co₂(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

〇(D)Bing Hu¹, Takeshi Kawami¹, Kidist Moges¹, Tetsuya Uemura¹, Masafumi Yamamoto¹ (1.Hokkaido Univ.)

14:45 〜 15:00

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy and NiAl spacer

〇(D)Jiamin CHEN^1,², Takao Furubayashi¹, Yukiko Takahashi¹, Taisuke Sasaki¹, Kazuhiro Hono^1,² (1.NIMS, 2.Tsukuba Univ.)

セッション情報

[14p-D11-1~7] 10.3 GMR・TMR・磁気記録技術

[14p-D11-1] [第5回女性研究者研究業績・人材育成賞(小舘香椎子賞)受賞記念講演] 垂直通電型巨大磁気抵抗効果増大の開発～スピントロニクス産業へ向けて～

▲ [14p-D11-2] Bias voltage dependence in magnetic tunnel junctions with a spinel Mg-Al-O barrier

▲ [14p-D11-3] Enhancement of CPP-GMR by a CuZn alloy spacer layer

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co₂(Fe-Mn)Si/Ag-Mg/Co₂(Fe-Mn)Si junctions

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co₂Fe(Ga_0.5Ge_0.5) Heusler alloy layer and conductive Mg_0.5Ti_0.5O_xbuffer layer

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co₂MnSi and Co₂(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy and NiAl spacer

認証

セッション情報

[14p-D11-1~7] 10.3 GMR・TMR・磁気記録技術

[14p-D11-1] [第5回女性研究者研究業績・人材育成賞(小舘香椎子賞)受賞記念講演] 垂直通電型巨大磁気抵抗効果増大の開発 ～スピントロニクス産業へ向けて～

▲ [14p-D11-2] Bias voltage dependence in magnetic tunnel junctions with a spinel Mg-Al-O barrier

▲ [14p-D11-3] Enhancement of CPP-GMR by a CuZn alloy spacer layer

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co2(Fe-Mn)Si/Ag-Mg/Co2(Fe-Mn)Si junctions

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co2Fe(Ga0.5Ge0.5) Heusler alloy layer and conductive Mg0.5Ti0.5Ox buffer layer

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co2MnSi and Co2(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co2Fe(Ge0.5Ga0.5) Heusler alloy and NiAl spacer

認証

[14p-D11-1] [第5回女性研究者研究業績・人材育成賞(小舘香椎子賞)受賞記念講演] 垂直通電型巨大磁気抵抗効果増大の開発～スピントロニクス産業へ向けて～

▲ [14p-D11-4] Current-perpendicular-to-plane giant magnetoresistance effect in Co₂(Fe-Mn)Si/Ag-Mg/Co₂(Fe-Mn)Si junctions

▲ [14p-D11-5] Polycrystalline CPP-GMR devices using <001> textured Co₂Fe(Ga_0.5Ge_0.5) Heusler alloy layer and conductive Mg_0.5Ti_0.5O_xbuffer layer

▼ [14p-D11-6] Temperature dependence of spin-dependent tunneling resistances of Co₂MnSi and Co₂(Mn,Fe)Si MTJs showing high tunneling magnetoresistances

▼ [14p-D11-7] Crystal orientation dependence in all-B2-trilayer current-perpendicular-to-plane giant magnetoresistance pseudo spin-valves using Co₂Fe(Ge_0.5Ga_0.5) Heusler alloy and NiAl spacer