[11p-A21-1~12] 13.8 化合物及びパワー電子デバイス・プロセス技術

▲ [11p-A21-4] Planar Device Isolation for β-Ga₂O₃ Field Effect Transistors

〇ManHoi Wong¹, Kohei Sasaki^{2, 1}, Akito Kuramata², Shigenobu Yamakoshi², Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

キーワード：Ga2O3,isolation,power device