[13a-B9-1~11] 8.4 Plasma etching

[13a-B9-9] CoFeB etching using neutral beam enhanced complex reaction

〇Tomohiro Kubota¹, Ryo Miyama², Yoshiyuki Kikuchi², Seiji Samukawa^1,3 (1.IFS, Tohoku Univ., 2.Tokyo Electron, 3.WPI-AIMR, Tohoku Univ.)

Keywords:transition metal complex, magnetoresistive RAM, etching process

Etching process of transition metals and magnetic metals is important for realization of magnetoresistive RAM (MRAM). It is possible to etch transition metals using neutral beam apparatus, by supplying energetic neutral beams and organic molecules for complex reaction without being decomposed by plasma exposure. CoFeB etching was realized based on this concept.