[13p-A37-1~13] 4.6 Nanocarbon and 2D Materials

▲ [13p-A37-2] Chemical solution processed MoS₂ on high-k oxide film

〇(DC)Joonam Kim¹、Kenichi Haga¹、Koichi Higasimine¹、Eisuke Tokumitsu¹ (1.JAIST)

キーワード：2Dsemiconductor, MoS2, solution process

Recently, exfoliated MoS₂ atomic thin layers have been fabricated into transistors which demonstrate excellent on/off current ratios and high carrier mobility. On the other hand, for large area formation of MoS₂ at low cost, the solution based process is promising. In this work, we report chemical solution process for MoS₂ on high-k dielectric films. Source solution used in this work is ammonium tetrathiomolybdate ((NH₄)₂MoS₄) dissolved in N-Methyl-2-pyrrolidone (NMP). The chemical-solution-processed MoS₂ directly deposited on Nb doped ZrO₂ (NZO) film. The well-defined MoS₂ film are observed by Raman spectrometer, X-ray diffraction and Transmission electron microscope. The details will be presented at the conference, including coating properties on various oxide substrates, which correlates surface energies of the substrates.