2016年 第77回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

6 薄膜・表面 » 6.2 カーボン系薄膜

[14p-A26-1~16] 6.2 カーボン系薄膜

2016年9月14日(水) 13:15 〜 17:45 A26 (203-204)

嘉数 誠(佐賀大)、伊藤 利道(阪大)、梅沢 仁(産総研)

17:00 〜 17:15

[14p-A26-14] 単結晶ダイヤモンド機械共振子の品質係数の向上

廖 梅勇1、戸田 雅也2、桑 立雯1、寺地 徳之1、井村 将隆1、小出 康夫1 (1.物質・材料研究機構、2.東北大院工)

キーワード:マイクロマシン、品質係数、単結晶ダイヤモンド

In this work, we make efforts to improve the Q-factor by improving the crystal quality of the SCD MEMS cantilevers or bridges. The single crystal diamond cantilevers were fabricated by using the IAL method. In order to improve the crystal quality of the SCD cantilevers, relative thick intrinsic SCD epilayers were grown on the implanted HPHT type Ib-diamond substrates. The length of the SCD cantilevers ranges from 30-140 µm, width from 2-12 µm, and thickness from 0.17 to 1.98 µm. The resonance frequency well followed the inverse power law relationship with the length of the cantilevers with an estimated Young’s modus around 1100GPa, consistent with our previous reports. As a result, the Q-factor was significantly improved from several hundred to more than ten thousand after growing the thick SCD epilayers. The maximum Q-factor at this moment reaches up to 39417.