[14p-A26-1~16] 6.2 カーボン系薄膜

▲ [14p-A26-9] Fabrication of triple-gate fin-type hydrogenated diamond MOSFETs

〇Jiangwei LIU¹、Hirotaka Oosato¹、Xi Wang¹、Meiyong Liao¹、Yasuo Koide¹ (1.NIMS)

キーワード：diamond