2016年 第77回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

13 半導体 » 13.8 化合物及びパワー電子デバイス・プロセス技術

[15a-B1-1~13] 13.8 化合物及びパワー電子デバイス・プロセス技術

2016年9月15日(木) 09:00 〜 12:30 B1 (展示ホール内)

塩島 謙次(福井大)

09:15 〜 09:30

[15a-B1-2] Characterization of Channel Temperature in Ga2O3 MOSFETs

ManHoi Wong1、Yoji Morikawa2、Kohei Sasaki3,1、Akito Kuramata3、Shigenobu Yamakoshi3、Masataka Higashiwaki1 (1.NICT、2.Silvaco Japan、3.Tamura Corp.)

キーワード:Ga2O3, channel temperature, thermal resistance

Knowledge of the channel temperature (Tch) in high power Ga2O3 metal-oxide-semiconductor field effect transistors (MOSFETs) is essential for device reliability studies. In this work, the Tch and thermal resistance (Rth) of field-plated β-Ga2O3 (010) MOSFETs were systematically determined through temperature-dependent electrical measurements complemented by 2-D device simulations that incorporated experimental Ga2O3 thermal parameters. A large Rth was extracted, which highlights the importance of thermal analysis for understanding the degradation mechanisms of Ga2O3 devices.