The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[19p-W621-1~12] 8.4 Plasma etching

Sat. Mar 19, 2016 2:30 PM - 5:45 PM W621 (W6)

Hisataka Hayashi(TOSHIBA), Koji Eriguchi(Kyoto Univ.)

2:30 PM - 2:45 PM

[19p-W621-1] Transport mechanism on reactive species in down-flow reactors for F-based Si etch

Kenji Ishikawa1, Makoto Sekine1, Toshio Hayashi1, Masaru Hori1, Yasuhiro Horiike2 (1.Nagoya University, 2.Tsukuba University)

Keywords:Chemical dry etching,Perocy radical

Effects of oxygen addition into fluorine-base plasma chemistry were sudied on the basis of formation of fluorine peroxy radicals.