[20p-S321-1~16] 3.13 半導体光デバイス

▲ [20p-S321-2] Analysis of Electrode Structure and Process for High-Power AlGaN-based Deep-Ultraviolet Light-Emitting Diodes

〇HAO Guodong¹、Taniguchi Manabu¹、Tamari Naoki^1,2、Inoue Shin-ichiro^1,3 (1.NICT、2.Tokuyama Corp.、3.JST-PREST)

キーワード：DUV-LED,current crowding,current uniform

AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) are undergoing a rapid evolution in recent years. Several groups reported the external quantum efficiency (EQE) in the 270-280 nm spectral range has exceed 10%. We recently demonstrated a record output power exceed 90 mW with an emission of 265 nm These are the highest EQE and output power reported to date for DUV-LEDs emission shorter than 280 nm. However, these values are still much lower than that achieved in the visible spectral range, and further improvement is required. Here, we report on a dramatically enhancement in wall-plug efficiency (WPE) with an improvement in the output power and a reduction of the operating voltage by using a well-designed p-electrode and an optimal annealing temperature in LED fabrication process.