[21p-H111-1~22] 6.3 Oxide electronics

△ [21p-H111-5] Impacts of Carrier Energy on Resistive Transition of Sputter-Deposition SiO₂ Films

〇Rintaro Yamaguchi¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)

Keywords:SiO2,resistive transition,hot electron

Hitherto, it was considered that the SiO2 film was not appropriate for the resistive transition phenomena. In this paper, however, we demonstrate the important fact revealing that the hot-electron injection plays an important role to assist the resistive transition.