[22p-S222-1~9] 21.1 Joint Session K

△ [22p-S222-7] Inactivation of Solution-processed IGZO Thin-films by UV Irradiation and Its Thermal Recovery

〇(B)Yusuke Ochiai¹, Dongjing Chen¹, Takaaki Morimoto¹, Nobuko Fukuda³, Yoshimichi Ohki^1,2 (1.SASE of Waseda Univ., 2.RIMST of Waseda Univ., 3.FLEC of AIST)

Keywords:IGZO,semiconductor,UV irradiation

We made IGZO thin films by a solution process. The films sintered at 250 °C show relatively good transfer characteristics as a MOS transistor. When they are exposed to UV photons, the on-state current decreases remarkably and the band-gap energy (E_g) increases. However, if the films are annealed at 250 °C following the UV exposure, both the on-state current and E_g return back to their original values before the UV exposure. In other words, the present solution-processed IGZO semiconductor sintered at 250 °C can exhibit the inactive and active states repeatedly by the combination of the UV exposure and the annealing.