09:00 〜 09:30 [6a-C17-1] [優秀論文賞受賞記念講演] 1.8mΩ・cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistorson a free-standing GaN substrate for 1.2-kV-class operation 〇岡 徹1、伊奈 務1、上野 幸久1、西井 潤弥1 (1.豊田合成)