Tohru Oka

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Speaker, Author, Co-Author

Wed. Sep 6, 2017 9:00 AM - 11:30 AM C17 (Training Room 2)

Oral presentation
| 13 Semiconductors
| 13.8 Compound and power electron devices and process technology

[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

9:00 AM - 9:30 AM

[6a-C17-1] [JSAP Paper Award Speech] 1.8mΩ・cm² vertical GaN-based trench metal–oxide–semiconductor field-effect transistors
on a free-standing GaN substrate for 1.2-kV-class operation

〇Tohru Oka¹, Tsutomu Ina¹, Yukihisa Ueno¹, Junya Nishii¹ (1.Toyoda Gosei)