[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-21] Activation evaluation of Mg implanted GaN layer by capacitance measurement

〇Shinya Takashima¹, Katsunori Ueno¹, Ryo Tanaka¹, Hideaki Matsuyama¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:Gallium Nitride, GaN, implantation

Realization of p-type doping by using ion implantation process is the key issue for the practical application of vertical GaN power devices. In order to evaluate the activation state of the Mg implanted layers, Mg implantation of 1E16 cm^-3 concentration was carried out into a p-type epi layer, and the capacitance of the p-GaN Schottky contact was evaluated. The capacitance value was low after implantation due to the depletion of the implanted region, but p-type CV characteristics were recovered after the heat treatment at 1300°C. However, from the analysis of Na distribution, Na decrease was observed on the surface side, indicating the influence of the residual compensating defects.