[8a-A202-1~11] 6.3 Oxide electronics

[8a-A202-11] Bandgap of GaN-InN-ZnO Solid Solution

〇Toshihisa Anazawa¹, Toshio Manabe¹, Hideyuki Amada¹, Fumiaki Kumasaka¹, Naoki Awaji¹, Yoshihiko Imanaka¹ (1.Fujitsu Labs.)

Keywords:GaN-InN-ZnO, solid solution, first principle calculation

We examined the bandgap of GaN-ZnO, InN-ZnO, and GaN-InN-ZnO solid solutions.with first principle density functional calculation. The result is that the bandgap of GaN-InN-ZnO showed significant lowering at the intermediate composition like GaN-ZnO while InN-ZnO did not.