[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-10] Carrier lifetime in 4H-SiC epitaxial layer on C-face with low impurity concentration

〇Mitsuhiro Kushibe¹, Johji Nishio¹, Takashi Shinohe¹, Akira Miyasaka², Hirokuni Asamizu³, Hidenori Kitai², Shinsuke Harada², Kazutoshi Kojima² (1.TOSHIBA Corp., 2.AIST, 3.ROHM Co.,Ltd.)

Keywords:SiC, carrier lifetime, C-face

Low carrier concentration was realized in C-face grown 4H-SiC epitaxial layer. The conductivity was n-type. By enhancing the carrier lifetime with using C implantation, long carrier lifetime was obtained.