[16a-F201-1~12] 13.10 化合物太陽電池

▲ [16a-F201-2] Study of the electrical properties of CuGaSe₂ thin-film solar-cells using admittance spectroscopy

〇Islam Muhammad Monirul¹、Ishizuka Shogo²、Shibata Hajime²、Niki Shigeru²、Akimoto Katsuhiro¹、Sakurai Takeaki¹ (1.Tsukuba Univ.、2.AIST)

キーワード：CuGaSe2, Admittance spectroscopy, Solar-cell

Defect characterization has been performed for the CuGaSe₂-based solar-cell structures using junction-capacitance technique, viz. admittance spectroscopy (AS). Polycrystalline CuGaSe₂ thin-films with different Se-flux condition were deposited through three-stage co-evaporation process. Temperature dependent AS reveals two major peaks around 50 meV and 350 meV above the valance band of the CuGaSe₂, respectively. In general, CuGaSe₂ samples grown with higher Se-flux condition show lower defect density, and improved solar-cell performances. Temperature-dependent AC-conductance, and capacitance-voltage measurement was performed to obtain transport properties, charge-density etc., and discussed in relation to the Se-flux condition during deposition of the CuGaSe₂ films.