[16p-B6-1~16] 17.2 Graphene

[16p-B6-9] [JSAP Young Scientist Award Speech] Wafer-Scale Growth and High Density Integration of Suspended Graphene Nanoribbons Array and its Optoelectronic Device Application

〇Hiroo Suzuki¹, Toshiro Kaneko¹, Yasushi Shibuta², Munekazu Ohno³, Yuki Maekawa², Toshiaki Kato¹ (1.Dept. of Electronic Eng., Tohoku Univ., 2.Dept. of Materials Eng., The Univ. of Tokyo, 3.Division of Materials Sci. and Eng., Faculty of Eng., Hokkaido Univ.)

Keywords:Graphene, Graphene nanoribbon, Plasma CVD

In our research group, we have developed the growth method of suspended graphene nanoribbon (GNR) by plasma CVD, where the Ni nanobar is used as a guide and catalyst for GNR growth. In this work, we focused on the growth mechanism of GNR aiming for the improvement of growth yield of GNR. Through the comparison of theoretical calculations (molecular dynamics simulation and phase diagram calculation) and detailed experimental studies, a unique growth model for suspended GNR from Ni nanobar can be established. The detailed adjustments of growth conditions were also carried out by following the growth model, resulting in the wafer-scale fabrication of over 1,000,000 of suspended GNRs. The unique optoelectronic response was also observed in the suspended GNR, which can be useful for the future photo-memory applications.