2:30 PM - 2:45 PM
[16p-E206-4] A study on H2 concentration dependence on the Si surface flattening with Ar/H2 annealing and its device applications
Keywords:flattening, annealing, MISFET
We had reported the improvement of MISFET electrical characteristics by Si surface flattening with Ar/4.9%H2 annealing. In this paper, we investigated H2 concentration dependence on the Si(100) surface flattening with Ar/H2 annealing.