[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [20p-234A-14] Drastic improvement of Schottky diode properties by Ar+O₂+H₂ sputtered InGaZnO

〇(DC)Yusaku Magari¹, Kenichiro Hamada¹, Kentaro Masuda¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Center for Nanotech.)

Keywords:InGaZnO, Schottky diode, Flexible device

An In-Ga-Zn-O (IGZO) has attracted particular attention owing to its high field effect mobility with large-area uniformity and suitable for flexible devices because the IGZO can be deposited by sputtering at room temperature. Until now the best Schottky diode properties of rectification ratio of 10⁸, barrier height of 0.91 eV, and an ideal factor of 1.04 have been reported with a maximum process temperature of 200 °C. We demonstrated a Schottky diode properties with a rectification ratio of 10¹⁰, a barrier height of 1.17 eV and an ideal factor of 1.07 at the maximum process temperature of 150 °C by introducing hydrogen during the IGZO deposition.