[21p-146-1~17] 15.4 III-V-group nitride crystals

[21p-146-2] Mechanism on the annihilation of the V-shaped pit in GaN (0001) grown by HVPE

〇Kenji Iso¹, Hirotaka Ikeda¹, Riki Gouda¹, Tae Mochizuki¹, Satoru Izumisawa¹ (1.Mitsubishi Chemical)

Keywords:HVPE, pit, 3PPL

We investigated the transition of the angle forming facets for a V-shaped pit when the growth proceeded using a three-photon excitation photoluminescence (3PPL). Furthermore, the planar growth on semipolar planes forming facets and c-plane was carried out with changing the carrier gas consisting of H₂ and N₂ in order to determine growth rates of each plane. Lastly, the mechanism for the V-shaped pit annihilation was discussed.