Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-146-1~17] 15.4 III-V-group nitride crystals

Fri. Sep 21, 2018 1:30 PM - 6:00 PM 146 (Reception Hall)

Tsutomu Araki(Ritsumeikan Univ.), Narihito Okada(Yamaguchi Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[21p-146-1] Unipolarization of GaN with Ga,N double polarities by HVPE method

〇Tatsuya Ezaki¹, Yusuke Shigefuji¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Technology for Innovation Yamaguchi Univ.)

1:45 PM - 2:00 PM

[21p-146-2] Mechanism on the annihilation of the V-shaped pit in GaN (0001) grown by HVPE

〇Kenji Iso¹, Hirotaka Ikeda¹, Riki Gouda¹, Tae Mochizuki¹, Satoru Izumisawa¹ (1.Mitsubishi Chemical)

2:00 PM - 2:15 PM

[21p-146-3] High temperature growth of N-polar GaN by THVPE

〇(M2)Daisuke Oozeki¹, Nao Takekawa¹, Naoya Kawamoto¹, Akira Yamaguchi², Hisashi Murakami¹, Yoshinao Kumagai¹, Kou Matsumoto², Akinori Koukitu¹ (1.TUAT, 2.TNSC)

2:15 PM - 2:30 PM

[21p-146-4] Flow-assisted Liquid Phase Epitaxy of GaN at atmospheric pressure

〇Shigeya Naritsuka¹, Daisuke Kambayashi¹ (1.Meijo Univ.)

2:30 PM - 2:45 PM

△ [21p-146-5] Fabrication of large-diameter GaN substrate with low curvature using the sapphire dissolution technique in the Na-flux growth

〇Takumi Yamada¹, Masayuki Imanishi¹, Kosuke Murakami¹, Kosuke Nakamura¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

2:45 PM - 3:00 PM

△ [21p-146-6] Investigation of leakage current for individual dislocations in the modified Na-flux GaN single crystal

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ.)

3:00 PM - 3:15 PM

△ [21p-146-7] Lattice distrotion analysis in the depth direction of a modified Na-flux GaN bulk single crystal using nanobeam X-ray diffraction

〇Kazuki Shida¹, Nozomi Yamamoto¹, Tetsuya Tohei¹, Masayuki Imanishi², Yusuke Mori², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Grad.Sch. Eng. Sci., Osaka Univ., 2.Grad. Sch. Eng., Osaka Univ., 3.JASRI)

3:15 PM - 3:30 PM

[21p-146-8] Dislocation Characteristics in GaN Substrates by Single Point Seed Na-flux Method

〇Hiroyuki Mizuochi¹, Yoshiyuki Tsusaka^1,2, Junji Matsui², Masayuki Imanishi³, Yusuke Mori³ (1.Grad. Sch. of Material Sci., Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Center, Univ. of Hyogo, 3.Grad. Sch. of Eng., Osaka Univ.)

3:45 PM - 4:00 PM

▲ [21p-146-9] Surface Treatment Method of GaN Substrates for Homoepitaxial GaN Growth by REMOCVD

〇(P)Frank Wilson Amalraj¹, Arun Kumar Dhasiyan¹, Naohiro Shimizu¹, Osamu Oda¹, Hiroki Kondo¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

4:00 PM - 4:15 PM

[21p-146-10] Morphological change of AlN film on sapphire by annealing

〇Shogo Motegi^1,2, Yosuke Mogami^1,2, Atsushi Osawa³, kazuo Osaki³, Yukitake Tanioka³, Atsushi Maeoka³, Masafumi Jo², Noritoshi Maeda², Hiroyuki Yaguchi¹, Hideki Hirayama² (1.Saitama Univ., 2.Riken, 3.SCREEN Co. Ltd.)

4:15 PM - 4:30 PM

[21p-146-11] AlN template using DC sputtered AlN films with high-temperature annealing

〇Yosuke Mogami^1,2, Shogo Motegi^1,2, Atsushi Osawa³, Kazuto Osaki³, Yukitake Tanioka³, Atsushi Maeoka³, Masafumi Jo¹, Noritoshi Maeda¹, Hiroyuki Yaguchi², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ., 3.SCREEN Finetech Solutions Co.Ltd.)

4:30 PM - 4:45 PM

△ [21p-146-12] -c/+c polarity inverted AlN structure controlled by sputtering condition

〇Yusuke Hayashi¹, Kenjiro Uesugi², Kanako Uesugi³, Hideto Miyake^1,3 (1.Mie Univ. Grad. School of RIS, 2.OPRI, 3.Mie Univ. Grad School of Eng.)

4:45 PM - 5:00 PM

△ [21p-146-13] Self-bias effect on non-polar AlN thin film growth by reactive sputtering

〇(M2)Kouta Tatejima^1,2, Takahiro Nagata², Keiji Ishibashi^2,3, Kenichirou Takahashi^2,3, Setsu Suzuki^2,3, Atsushi Ogura¹, Toyohiro Chikyow² (1.Meiji Univ., 2.NIMS, 3.COMET Inc.)

5:00 PM - 5:15 PM

△ [21p-146-14] Quality Improvement and Suppression of Cracking for High-Temperature Annealed AlN Films

〇Kenjiro Uesugi¹, Yusuke Hayashi², Kanako Shojiki³, Kentaro Nagamatsu¹, Harumasa Yoshida¹, Hideto Miyake^2,3 (1.OPRI, Mie Univ., 2.Grad. School of RIS, Mie Univ., 3.Grad. School of Eng., Mie Univ.)

5:15 PM - 5:30 PM

[21p-146-15] Growth temperature dependence of InGaN electric properties

〇Masahiro Hemmi¹, Naohiro Imai¹, Hiroki Yamaki¹, Kouhei Tsubaki¹, Toshiki Makimoto¹ (1.Waseda Univ.)

5:30 PM - 5:45 PM

[21p-146-16] Electrical properties of c-axis-oriented InN films grown on glass substrates

〇Masumi Sakamoto¹, Atsushi Kobayashi¹, Kohei Ueno¹, Hiroshi Fujioka^1,2 (1.IIS, The Univ. of Tokyo, 2.JST-ACCEL)

5:45 PM - 6:00 PM

[21p-146-17] Control of electrical conductivity for c-BN films by Si doping

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹, Kazuhide Kumakura¹ (1.NTT BRL)

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