Hiroyuki Mizuochi

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 1:30 PM - 6:00 PM 146 (Reception Hall)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[21p-146-1~17] 15.4 III-V-group nitride crystals

3:15 PM - 3:30 PM

[21p-146-8] Dislocation Characteristics in GaN Substrates by Single Point Seed Na-flux Method

〇Hiroyuki Mizuochi¹, Yoshiyuki Tsusaka^1,2, Junji Matsui², Masayuki Imanishi³, Yusuke Mori³ (1.Grad. Sch. of Material Sci., Univ. of Hyogo, 2.Syn. Rad. Nano-Tech. Center, Univ. of Hyogo, 3.Grad. Sch. of Eng., Osaka Univ.)

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