[21p-146-1~17] 15.4 III-V族窒化物結晶

▲ [21p-146-9] Surface Treatment Method of GaN Substrates for Homoepitaxial GaN Growth by REMOCVD

〇(P)Frank Wilson Amalraj¹、Arun Kumar Dhasiyan¹、Naohiro Shimizu¹、Osamu Oda¹、Hiroki Kondo¹、Kenji Ishikawa¹、Masaru Hori¹ (1.Nagoya Univ.)

キーワード：III-V epitaxial growth

Our newly developed Radical Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) has a VHF (very high frequency-100MHz) plasma and proved that the growth temperature of Gallium Nitride (GaN) can be largely decreased without ammonia gas due to radical enhanced growth. GaN has excellent properties such as direct and wide band gap energy of 3.4 eV at room temperature in the hexagonal phase (Wurtzite). GaN therefore attracted much attention for their potential use in electronic devices. Major contaminants on GaN substrates are native oxides. Hence, the homoepitaxial growth of GaN on insufficiently cleaned or improperly prepared GaN substrates results in defective layers. In the present work, we focus on the surface preparation which is very essential for the growth of homoepitaxial GaN.