[21p-232-1~18] 6.2 カーボン系薄膜

▲ [21p-232-12] Hydrogen Terminated Diamond Interface Properties of Overlapping Gate MOSFET S imolation Using Non-charge Surface Model with Al₂O₃

〇REEM MOHAMMED ALHASANI¹、Taichi Yabe¹、Hiroshi Kawarada¹ (1.Waseda University)

キーワード：Diamond, MOSFET, Overlapping Gate