Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[19a-D101-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

Mon. Mar 19, 2018 9:15 AM - 11:45 AM D101 (56-101)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
空欄：どちらもなし

+Add all to schedule

9:15 AM - 9:30 AM

△ [19a-D101-1] Improvement of Blue Response due to Carrier Separation Effect of Nanocrystalline Si Layer

〇(D)Yuya Onitsuka^1,2,3, Kentaro Imamura^1,2, Hikaru Kobayashi^1,2 (1.ISIR, Osaka Univ., 2.CREST-JST, 3.JSPS Research Ferrow)

9:30 AM - 9:45 AM

▼ [19a-D101-2] CARRIER TRANSPORT IN PEDOT:PSS/c-Si HETEROJUNCTION SOLAR CELLS

〇A.T.M. Saiful Islam¹, Koji Kasahara¹, Takanori Kuroki¹, Ryo Ishikawa¹, Hajime Shirai¹ (1.Saitama University)

9:45 AM - 10:00 AM

[19a-D101-3] Development of the Passivation Layer for p-type CuI Thin Film Prepared by 2-step Method
-As a New Hole Selective Contact for the Silicon Heterojunction Solar Cells-

〇(M1)Min Cui¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Nagoya Univ.)

10:00 AM - 10:15 AM

△ [19a-D101-4] Study on Chemical Passivation of TiO_x Passivating Layer/ Crystalline Si

〇Takeya Mochizuki¹, Kazuhiro Gotoh¹, Akio Ohta^1,2, Shyohei Ogura³, Yasuyoshi Kurokawa¹, Seiichi Miyazaki¹, Katsuyuki Fukutani³, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.Inst. for Advanced Research, Nagoya Univ., 3.Inst. of Industrial Sci., The Univ. of Tokyo)

10:15 AM - 10:30 AM

[19a-D101-5] Impact of SiO_x Interlayer on Thermal Stability of TiO_x Passivating Layer

〇Takeya Mochizuki¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ.)

10:45 AM - 11:00 AM

[19a-D101-6] Properties of i-a-Si:H passivation layer deposited by DC-superimposed RF facing target sputtering

〇(M1)Yuta Shiratori¹, Akira Faris¹, Kazuyoshi Nakada¹, Shinsuke Miyajima¹ (1.School of Engineering, Tokyo Tech.)

11:00 AM - 11:15 AM

[19a-D101-7] i-a-Si:H passivation layer deposited by facing target sputtering using 2-step deposition

Faris Akira Bin Mohd Zulkifly¹, Yuta Shiratori¹, Kazuyoshi Nakada¹, 〇Shinsuke Miyajima¹ (1.Tokyo Tech)

11:15 AM - 11:30 AM

[19a-D101-8] Local Evaluation of Al₂O₃ Passivation Layers for Crystalline Silicon Solar Cells by Super- Higher-Order Scanning Nonlinear Dielectric Microscopy

〇Kento Kakikawa¹, Yamagishi Yuji¹, Tanahashi Katsuto², Takato Hidetaka², Cho Yasuo¹ (1.RIEC Tohoku Univ., 2.AIST)

11:30 AM - 11:45 AM

[19a-D101-9] Proton-Mediated Increase of a-Si:H Growth Rate at High Temperature

〇Yasutake Toyoshima¹ (1.AIST)

Session information

[19a-D101-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [19a-D101-1] Improvement of Blue Response due to Carrier Separation Effect of Nanocrystalline Si Layer

▼ [19a-D101-2] CARRIER TRANSPORT IN PEDOT:PSS/c-Si HETEROJUNCTION SOLAR CELLS

[19a-D101-3] Development of the Passivation Layer for p-type CuI Thin Film Prepared by 2-step Method
-As a New Hole Selective Contact for the Silicon Heterojunction Solar Cells-

△ [19a-D101-4] Study on Chemical Passivation of TiO_x Passivating Layer/ Crystalline Si

[19a-D101-5] Impact of SiO_x Interlayer on Thermal Stability of TiO_x Passivating Layer

[19a-D101-6] Properties of i-a-Si:H passivation layer deposited by DC-superimposed RF facing target sputtering

[19a-D101-7] i-a-Si:H passivation layer deposited by facing target sputtering using 2-step deposition

[19a-D101-8] Local Evaluation of Al₂O₃ Passivation Layers for Crystalline Silicon Solar Cells by Super- Higher-Order Scanning Nonlinear Dielectric Microscopy

[19a-D101-9] Proton-Mediated Increase of a-Si:H Growth Rate at High Temperature

Authentication

Session information

[19a-D101-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

△ [19a-D101-1] Improvement of Blue Response due to Carrier Separation Effect of Nanocrystalline Si Layer

▼ [19a-D101-2] CARRIER TRANSPORT IN PEDOT:PSS/c-Si HETEROJUNCTION SOLAR CELLS

[19a-D101-3] Development of the Passivation Layer for p-type CuI Thin Film Prepared by 2-step Method-As a New Hole Selective Contact for the Silicon Heterojunction Solar Cells-

△ [19a-D101-4] Study on Chemical Passivation of TiOx Passivating Layer/ Crystalline Si

[19a-D101-5] Impact of SiOx Interlayer on Thermal Stability of TiOx Passivating Layer

[19a-D101-6] Properties of i-a-Si:H passivation layer deposited by DC-superimposed RF facing target sputtering

[19a-D101-7] i-a-Si:H passivation layer deposited by facing target sputtering using 2-step deposition

[19a-D101-8] Local Evaluation of Al2O3 Passivation Layers for Crystalline Silicon Solar Cells by Super- Higher-Order Scanning Nonlinear Dielectric Microscopy

[19a-D101-9] Proton-Mediated Increase of a-Si:H Growth Rate at High Temperature

Authentication

[19a-D101-3] Development of the Passivation Layer for p-type CuI Thin Film Prepared by 2-step Method
-As a New Hole Selective Contact for the Silicon Heterojunction Solar Cells-

△ [19a-D101-4] Study on Chemical Passivation of TiO_x Passivating Layer/ Crystalline Si

[19a-D101-5] Impact of SiO_x Interlayer on Thermal Stability of TiO_x Passivating Layer

[19a-D101-8] Local Evaluation of Al₂O₃ Passivation Layers for Crystalline Silicon Solar Cells by Super- Higher-Order Scanning Nonlinear Dielectric Microscopy