[17p-D104-1~10] 10.2 Fundamental and exploratory device technologies for spin

▼ [17p-D104-9] Room-temperature operation of a vertical spin field-effect transistor using an Fe GaOx / MgO Fe system

〇Toshiki Kanaki¹, Shin Matsumoto¹, Sai Krishina Narayananellore², Hidekazu Saito², Yoshihiro Iwasa¹, Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. Tokyo, 2.AIST)

Keywords:spin transistor