[17p-D104-1~10] 10.2 Fundamental and exploratory device technologies for spin

▼ [17p-D104-10] Temperature dependence of spin signals in an AlGaAs/GaAs-based high-mobility two-dimensional electron system

〇Zhichao Lin¹, Da Pan², Mahmoud Rasly¹, Tetsuya Uemura¹ (1.IST, Hokkaido Univ., 2.Eng., Hokkaido Univ.)

Keywords:spin injection, 2DEG, AlGaAs/GaAs

The injection of spin-polarized electrons from ferromagnets into semiconductors has attracted much interest for creating spin transistors. Spin injection into bulk semiconductors such as GaAs [1], Si [2], and Ge [3] has been realized at room temperature. On the other hand, a two-dimensional electron gas (2DEG) structure of AlGaAs/GaAs has attracted much interest for its high electron mobility, and it is used for high electron mobility transistors (HEMTs). Apart from that, the 2DEG structure is useful as a channel of a spin transistor.
Up to date, however, electrical spin injection into an AlGaAs/GaAs 2DEG channel has been achieved only by using GaMnAs as a spin source [4], and the demonstration of spin injection was limited below 50 K because of the low Curie temperature (T_C < ~200 K) of GaMnAs. In this study, we demonstrated spin injection into an AlGaAs/GaAs 2DEG channel up to 138 K by using CoFe (T_C > 1000 K) as a spin source.