Polarization dependence PL from GaAsBi/GaAs MQW MBE-grown on GaAs substrate

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Sat. Mar 17, 2018 1:45 PM - 5:30 PM F214 (61-214)

Takashi Kita(Kobe Univ.), Akihiro Wakahara(Toyohashi Tech)

4:30 PM - 4:45 PM

〇Toui Higuchi¹, Akira Tsukamoto¹, Eigo Ito¹, Saburo Tanaka¹, Fumitaro Ishikawa¹, Satoshi Shimomura¹ (1.Ehime Univ.)

Keywords:GaAsBi, Polarization dependence PL