The 65h JSAP Spring Meeting, 2018

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Symposium (Oral)

Symposium » Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

[19p-E202-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

Mon. Mar 19, 2018 1:30 PM - 5:30 PM E202 (57-202)

Akira Sakai(Osaka Univ.), Akira Uedono(Tsukuba Univ.)

5:00 PM - 5:30 PM

[19p-E202-8] Three-dimensional Analysis of Defect-related Singularity Structures in Nitride Semiconductor Materials

〇Akira Sakai1, Kazuki Shida1, Shotaro Takeuchi1, Tetsuya Tohei1, Yasuhiko Imai2, Shigeru Kimura2 (1.Osaka Univ., 2.JASRI)

Keywords:Nitride Semiconductor, Singularity Structures, nanoXRD

We have investigated lattice defects, such as dislocations, strain, and nano-voids, in nitride semiconductor crystals to reveal the functionality as singularity structures (SS) by using nanobeam X-ray difffraction (nano XRD). In this presentation, I will talk about the methodology of three-dimensional analysis of nanoXRD for SS and some experimental results.