[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-10] Numerical simulation on oxygen transfer in Si melt under a cusp-shaped magnetic field using a 3D global model

〇Daisuke Murakami¹, Liu Xin², Satoshi Nakano², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.Kyushu Univ. RIAM)

Keywords:silicon, CZ method, cusp-shaped magnetic field

In order to investigate the effect of cusp-shaped magnetic field (CMF) configuration on oxygen transfer in Si melt, numerical simulations were conducted for growth of a Czochralski (CZ) crystal in the CMF using a 3D global model. Based on the partly 3D global model proposed by Liu and Kakimoto, the 3D global model which can generate CMF by calculating integration of Biot-Savart equation was developed. The results indicated that the growth interface shape and the oxygen concentration at the growth interface can be controlled effectively by optimizing the distribution of CMF.