Daisuke Murakami

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Speaker, Author, Co-Author

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C212 (C212)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[18a-C212-1~11] 15.7 Crystal characterization, impurities and crystal defects

11:30 AM - 11:45 AM

[18a-C212-10] Numerical simulation on oxygen transfer in Si melt under a cusp-shaped magnetic field using a 3D global model

〇Daisuke Murakami¹, Liu Xin², Satoshi Nakano², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.Kyushu Univ. RIAM)