[18p-N302-1~18] 13.7 Compound and power electron devices and process technology

[18p-N302-2] Optical DLTS studies of MOVPE n-GaN with different carbon concentrations

〇(M2)Syun Ito¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol)

Keywords:ODLTS, MCTS

Hole trap H1 (Ev+0.86~88 eV) has been observed in MOVPE n-GaN by MCTS using the above-bandgap light pulses or by ODLTS using the below-bandgap light pulses. H1 has been ascribed to carbon-related or Ga vacancy-related detects. It is possible that in most of samples, MCTS and ODLTS spectra consist of several spectra for traps with close energy levels. In this work, ODLTS measurements in the wavelength range from 390~480 nm were made to resolve H1 spectra for samples with various carbon concentrations in the range from 3.6x10¹⁵ to 8.5x10¹⁵ cm^-3. Three traps were resolved in n-GaN with the carbon concentration of 8.5x10¹⁵ cm^-3. A change in ODLTS spectra will be shown depending on carbon concentration.