13:30 〜 15:30
▲ [18p-PB1-41] First-principles study for spin Hall magnetoresistance in Co/Pt bilayer film system
キーワード：Spin Hall magnetoresistance, First-principles calculation
Understanding the transport phenomena in magnetic materials has been a crucial ingredient for designing novel materials with desired properties for spintronic applications. In bilayer systems of magnetic material (MM) and heavy metal (HM), the electrical resistance of the heavy metal layer can be tuned by varying the angle between the applied current and the magnetization direction of the magnetic material layer. This effect is commonly known as the spin Hall magnetoresistance effect. This attractive magnetic proximity effect (MPE) has been widely investigated experimentally. On the contrary, there are only few reports on the theoretical side. In the present work, we use the theoretical approach to study the SMR by using the first-principles calculation, full-potential linearized augmented plane wave method (FLAPW) in order to design materials with high efficiency of SMR.