The 80th JSAP Autumn Meeting 2019

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Poster presentation

Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18p-PB5-1~36] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 18, 2019 4:00 PM - 6:00 PM PB5 (PB)

4:00 PM - 6:00 PM

[18p-PB5-6] Structural properties of α - (Alx Ga1-x)2O3 thin films prepared by Mist CVD method

〇(B)Ayumu Hashimoto1, Yuji Nakabayashi2, Takeshi Kawae3, Satoru Yamada1 (1.NITIC, 2.JAIST, 3.Kanazawa Univ.)

Keywords:gallium oxide, mist-CVD