[19p-E313-1~9] 15.5 Group IV crystals and alloys

△ [19p-E313-8] Hall mobility evaluation of inversion carriers in strained Si/relaxed SiGe/Si(110) heterostructures

〇(M2)Daichi Namiuchi¹, Kentarou Sawano², Atsushi Onogawa¹, Yuuichi Sano¹, Daisuke Izumi¹, Keisuke Arimoto¹, Jyunji Yamanaka¹, Kosuke Hara¹, Kiyokazu Nakagawa¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

Keywords:Hall mobility, strained Si, Hall effect

In order to realize high performance and low power consumption of the CMOS device, it is necessary to improve the hole mobility.The tensile strained Si having the (110) plane on its surface has the calculation result that the hole effective mass can be reduced to less than half of the unstrained Si.In this study, Hall measurement was carried out under applied gate voltage using Hall Bar with gate electrode, and evaluation of hole mobility was attempted.It was confirmed that the device with strained Si had higher mobility than Si device.Especially the thinner strain Si is more effective for improving mobility.