09:30 〜 09:45
▲ [20a-E204-3] Reducing Dark Current Mechanisms for Barrier Infrared Photodetector Using Type II InAs/GaSb Superlattices
キーワード：superlattice, dark current, barrier photodetector
Reducing the dark current is one of the key issues to obtain high-performance
infrared (IR) photodetector operating in a wide range of
wavelength. This work investigates theoretically InAs\ GaSb Type-II
superlattice (T2SL) infrared mid-wave (MWIR) barrier photodetector's
photo-electrical performance. To achieve optimal device, two different
barrier structures, n-barrier-n (nBn) and p-barrier-n (pBn) are
evaluated and compared to pin photodiodes. Numerical simulation results suggest
both types of barriers obtain an improvement of dark current and
operating temperature compare to pin photodiodes. The pBn structure
exhibits significantly lower dark current compared to the nBn
structures at the same bias voltage. However, when considering the
operating bias (photoresponse saturation point), the dark current
performances are comparable.
infrared (IR) photodetector operating in a wide range of
wavelength. This work investigates theoretically InAs\ GaSb Type-II
superlattice (T2SL) infrared mid-wave (MWIR) barrier photodetector's
photo-electrical performance. To achieve optimal device, two different
barrier structures, n-barrier-n (nBn) and p-barrier-n (pBn) are
evaluated and compared to pin photodiodes. Numerical simulation results suggest
both types of barriers obtain an improvement of dark current and
operating temperature compare to pin photodiodes. The pBn structure
exhibits significantly lower dark current compared to the nBn
structures at the same bias voltage. However, when considering the
operating bias (photoresponse saturation point), the dark current
performances are comparable.