2019年第80回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

コードシェアセッション » 【CS.8】 10.1 新物質・新機能創成(作製・評価技術)、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

[20a-E216-7~13] 【CS.8】 10.1 新物質・新機能創成(作製・評価技術)、10.2 スピン基盤技術・萌芽的デバイス技術、10.3 スピンデバイス・磁気メモリ・ストレージ技術、10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

2019年9月20日(金) 10:45 〜 12:30 E216 (E216)

谷口 知大(産総研)

11:45 〜 12:00

[20a-E216-11] Crystallinity dependence of spin-orbit torque in electrically-conductive RuO2

Daichi Sugawara1、Shutaro Karube1、Makoto Kohda1、Junsaku Nitta1 (1.Tohoku Univ)

キーワード:Spin-current, Spin-orbit torque

Spin-orbit (SO) torque generated by the spin Hall effect (SHE) or Rashba-Edelstein effect(REE) is expected to effectively perform magnetization switching in an adjacent ferromagnet. To increase conversion efficiency or functionality, recently there has been interest in synthesizing SO materials such as oxides. CuOX was successfully observed to have finite spin torque efficiency through oxidation from pure Cu, which has negligible SO interaction interestingly. However, the mechanism for this generation in oxides is still controversial. Basically, a finite SO interaction could generate the SO torque via the SHE or the REE, and gives different types of spin relaxation in different crystallinities in the materials .To unveil the systematic mechanism of the SO torque generation in SO oxides, we have studied polycrystalline and epitaxial electrically-conductive RuO2 based on the above background by means of spin-torque ferromagnetic resonance in this study. First of all, we deposited two kinds of 10 nm-thick RuO2 film onto Al2O3(11-02) and Si/SiO2 substrates by using reactive magnetron RF sputtering with a pure Ru target with 0.06 Pa-oxygen partial pressure. The substrate temperature was increased to 400 °C during sputtering for epitaxial RuO2. After the deposition, we checked the crystallinity as shown in Figs. (a), (b), and (c) by means of reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD), and deposited Co(5nm)/AlOX(2nm) in-situ onto the RuO2 layer. Finally, we prepared devices for ST-FMR measurement by photo-lithography and Ar-ion milling. In the measurement, we surprisingly found an enhancement of the spin-torque efficiency ξST in the epitaxial RuO2ST = 14.3 ± 2.0 %) compared with the polycrystalline film (ξST =10.2 ± 1.7 %). We discuss the detailed mechanism for the enhancement in this meeting.