[20p-B12-1~11] 13.9 化合物太陽電池

[20p-B12-9] 表面活性化接合で作成したSi/GaAs界面の低温FIB法による断面TEM評価

〇大野 裕¹、清水 康雄¹、永井 康介¹、麻生 亮太郎²、神内 真人²、吉田 秀人²、梁 剣波³、重川 直輝³ (1.東北大金研、2.阪大産研、3.大阪市大)

キーワード：常温接合、低温FIB

Surface-activated bonding (SAB) at room temperature (RT) is applied to form Si/GaAs hetero-interfaces with a low interface electrical resistance, and high-efficiency InGaP/GaAs/Si triple-junction cells are demonstrated. We have recently clarified that the structural and compositional properties of semiconductor homo-interfaces fabricated by SAB are modified during FIB processes operated at RT, and such a modification can be suppressed by FIB processes operated at -150 ^oC. In the present work, we have therefore examined the atomic arrangement and composition at Si/GaAs hetero-interfaces fabricated by SAB using X-TEM specimens fabricated by FIB milling operated at -150 ^oC.