2019年第80回応用物理学会秋季学術講演会

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一般セッション(口頭講演)

15 結晶工学 » 15.6 IV族系化合物(SiC)

[20p-E311-1~17] 15.6 IV族系化合物(SiC)

2019年9月20日(金) 13:30 〜 18:15 E311 (E311)

矢野 裕司(筑波大)、田中 保宣(産総研)

14:15 〜 14:30

[20p-E311-4] Physical Analysis of Remained Oxidation Byproducts as the Origins of Lattice
Distortion at 4H-SiC Surface

Adhi Dwi Hatmanto1、〇Koji Kita1 (1.The Univ. of Tokyo)

キーワード:Surface strain, FTIR, Oxidation

We have reported an oxidation-induced significant lattice distortion of SiC, locally in the vicinity of the SiO2/SiC interface and its relaxation by Ar annealing. It was also suggested that the lattice distortion introduction and relaxation would be attributable to the formation and decomposition of oxidation-induced byproducts, even though the existence of such remaining byproducts have not yet been physically clarified. In this work, we investigate the chemical bonds in thermally-oxidized 4H-SiC surface region by Fourier-transform infrared spectroscopy with attenuated total reflection mode (FTIR-ATR) to physically clarify the existence of remaining byproducts of thermal oxidation in the surface region. It was clearly indicated that the anomalous surface lattice distortion is strongly correlated to the amount of Si-O, C-O, and C=O structures formed in the surface region of SiC.