Oral presentation

16 Amorphous and Microcrystalline Materials » 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

Sun. Mar 10, 2019 1:15 PM - 5:45 PM W833 (W833)

Hirokazu Masai(AIST), Norimitsu Yoshida(Gifu Univ.), Toshihiro Nakaoka(Sophia Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:15 PM - 1:30 PM

[10p-W833-1] Improvement of analysis method for diffusion of OH groups
through the binding interface of silica glasses

〇Yuya Sugiyama¹, Yusuke Aoki¹, Nobu Kuzuu¹, Hideharu Horikoshi², Naohiro Horii³ (1.Fukui Univ., 2.Tosoh SGM, 3.Fukui Coll.)

1:30 PM - 1:45 PM

[10p-W833-2] Determination of Hydroxyl Diffusion Coefficient by the Fitting of Theoretical Solution to the Experimental Data of OH Distribution near the Binding Interface of Silica Glasses

〇(M1)Yusuke Aoki¹, Yu Arakawa¹, Nobu Kuzuu¹, Hideharu Horikoshi², Yuya Sugiyama¹, Naohiro Horii³ (1.Fukui Univ., 2.Tosoh SGM, 3.Nat'l Inst. Tech. Fukui Coll)

1:45 PM - 2:00 PM

[10p-W833-3] Devitrification of Silica Glass Promoted by Contacting an NaCl Grain I:
Analysis of Devitrification Process of Silica Glass

〇Naohiro Horii¹, Kuzuu Nobu², Hideharu Horikoshi³ (1.NIT Fukui College, 2.Univ. of Fukui, 3.Tosoh SGM)

2:00 PM - 2:15 PM

[10p-W833-4] Devitrification of Silica Glass Promoted by Contacting an NaCl Grain II: A Model to Describe the Devitrification

〇Nobu Kuzuu¹, Naohiro Hrii², Hideharu Horikoshi³ (1.Univ. of Fukui, 2.NIT Fukui College, 3.Tosoh SGM)

2:15 PM - 2:30 PM

[10p-W833-5] Laser-induced crystallization of Na₂Fe_xMn_1-xP₂O₇ glass

〇Tsuyoshi Honma¹, Yu Kumagai¹, Takayuki Komatsu¹ (1.Nagaoka Univ. Tech.)

2:30 PM - 2:45 PM

[10p-W833-6] Intermediate-Range Orders on the Glass Transition and Aging

〇Hiroshi Kobayashi¹, Haruyuki Takahashi² (1.AIST (retired), 2.Ibaraki Uni.)

2:45 PM - 3:00 PM

[10p-W833-7] Effect of textured glass substrates with various surface roughness on the crystallization mechanism of electron-beam-evaporated amorphous Si films induced by FLA

〇Keisuke Kurata¹, Keisuke Ohdaira¹ (1.JAIST)

3:00 PM - 3:15 PM

△ [10p-W833-8] Low-temperature yttrium oxide atomic layer deposition

〇Kentaro Saito¹, Kensaku Kanomata², Masanori Miura², BashirAhmmad Arima¹, Shigeru Kubota¹, Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL Yamagata Univ.)

3:15 PM - 3:30 PM

△ [10p-W833-9] Anticorrosion Characteristics of Nb₂O₅ Laminated Coating by Room Temperature Atomic Layer Deposition

〇(DC)Kazuki Yoshida¹, Masanori Miura², Ying Jie¹, Kanomata Kensaku², Fumihiko Hirose¹ (1.Yamagata Univ., 2.ROEL Yamagata Univ.)

3:45 PM - 4:00 PM

[10p-W833-10] 【Highlight】[Young Scientist Presentation Award Speech] Development of Transition-Metal Based Chalcogenide Phase-Change Materials for Non-Volatile Phase-Change Memory Application

〇Yuta Saito¹, Shogo Hatayama², Shuang Yi², Satoshi Shindo², Paul Fons¹, Alexander V. Kolobov¹, Keisuke Kobayashi^3,4,5, Yuji Sutou² (1.AIST NeRI, 2.Tohoku Univ., 3.JAEA, 4.Kochi Tech., 5.Nagoya Univ.)

4:00 PM - 4:15 PM

△ [10p-W833-11] Reversible resistance change to gamma-ray irradiation in a Ge-(Sb)-Te thin film with Ag-Pt electrodes

〇(B)Tatsuya Watanabe¹, Hyoseong Park¹, Isao Yoda², Yoshinori Shohmitsu³, Shigeo Kawasaki³, Toshihiro Nakaoka¹ (1.Sophia Univ., 2.Tokyo Tech, 3.Japan Aerospace Exploration Agency)

4:15 PM - 4:30 PM

[10p-W833-12] Optical absorption spectra of copper sulfide dendrites

〇Tamihiro Gotoh¹, Ryotaro Nishikawa¹ (1.Gunma Univ.)

4:30 PM - 4:45 PM

[10p-W833-13] Photo-induced oxidation of amorphous Ge₄₀S₆₀ films - Observation of the oxide layer by X-ray• neutron reflectometry

〇Yoshifumi Sakaguchi¹, Takayasu Hanashima¹, Hiroyuki Aoki², Al-Amin Ahmed Simon³, Maria Mitkova³ (1.CROSS, 2.JAEA, 3.BSU)

4:45 PM - 5:00 PM

[10p-W833-14] Fabrication of 2-Terminal Memory Test Element with 100 nm Diameter or Smaller

〇Ryo Fukuoka¹, Hiroki Tokuhira¹, Katsuyoshi Komatsu¹, Koji Matsuo¹, Hide Tanaka¹, Gaku Sudo¹, Kazuya Ohuchi¹ (1.Toshiba Memory Corporation)

5:00 PM - 5:15 PM

[10p-W833-15] High Temperature Creep Behavior of Ge₂₈Sb₁₂Se₆₀ glass

〇Naoyuki Kitamura¹ (1.AIST)

5:15 PM - 5:30 PM

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr₂Ge₂Te₆ phase change material

〇YI SHUANG¹, Yuji Sutou¹, Shogo Hatayama¹, Satoshi Shindo¹, Song Yunheub², Daisuke Ando¹, Junichi Koike¹ (1.Tohoku Univ., 2.Hanyang Univ.)

5:30 PM - 5:45 PM

[10p-W833-17] Electric transport mechanism of low-resistance amorphous Cr₂Ge₂Te₆

〇(D)Shogo Hatayama¹, Yuji Sutou¹, Daisuke Ando¹, Junichi Koike¹, Keisuke Kobayashi^2,3 (1.Tohoku Univ., 2.JASRI, 3.Kochi Univ. Technol.)

Session information

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[10p-W833-1] Improvement of analysis method for diffusion of OH groups
through the binding interface of silica glasses

[10p-W833-2] Determination of Hydroxyl Diffusion Coefficient by the Fitting of Theoretical Solution to the Experimental Data of OH Distribution near the Binding Interface of Silica Glasses

[10p-W833-3] Devitrification of Silica Glass Promoted by Contacting an NaCl Grain I:
Analysis of Devitrification Process of Silica Glass

[10p-W833-4] Devitrification of Silica Glass Promoted by Contacting an NaCl Grain II: A Model to Describe the Devitrification

[10p-W833-5] Laser-induced crystallization of Na₂Fe_xMn_1-xP₂O₇ glass

[10p-W833-6] Intermediate-Range Orders on the Glass Transition and Aging

[10p-W833-7] Effect of textured glass substrates with various surface roughness on the crystallization mechanism of electron-beam-evaporated amorphous Si films induced by FLA

△ [10p-W833-8] Low-temperature yttrium oxide atomic layer deposition

△ [10p-W833-9] Anticorrosion Characteristics of Nb₂O₅ Laminated Coating by Room Temperature Atomic Layer Deposition

[10p-W833-10] 【Highlight】[Young Scientist Presentation Award Speech] Development of Transition-Metal Based Chalcogenide Phase-Change Materials for Non-Volatile Phase-Change Memory Application

△ [10p-W833-11] Reversible resistance change to gamma-ray irradiation in a Ge-(Sb)-Te thin film with Ag-Pt electrodes

[10p-W833-12] Optical absorption spectra of copper sulfide dendrites

[10p-W833-13] Photo-induced oxidation of amorphous Ge₄₀S₆₀ films - Observation of the oxide layer by X-ray• neutron reflectometry

[10p-W833-14] Fabrication of 2-Terminal Memory Test Element with 100 nm Diameter or Smaller

[10p-W833-15] High Temperature Creep Behavior of Ge₂₈Sb₁₂Se₆₀ glass

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr₂Ge₂Te₆ phase change material

[10p-W833-17] Electric transport mechanism of low-resistance amorphous Cr₂Ge₂Te₆

Authentication

Session information

[10p-W833-1~17] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

△ [10p-W833-8] Low-temperature yttrium oxide atomic layer deposition

△ [10p-W833-9] Anticorrosion Characteristics of Nb2O5 Laminated Coating by Room Temperature Atomic Layer Deposition

△ [10p-W833-11] Reversible resistance change to gamma-ray irradiation in a Ge-(Sb)-Te thin film with Ag-Pt electrodes

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr2Ge2Te6 phase change material

Authentication

△ [10p-W833-9] Anticorrosion Characteristics of Nb₂O₅ Laminated Coating by Room Temperature Atomic Layer Deposition

▲ [10p-W833-16] Contact resistance change memory with N-doped Cr₂Ge₂Te₆ phase change material